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| ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP6A17E6 SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23-6 package SOT23-6 APPLICATIONS * DC - DC Converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMP6A17E6TA ZXMP6A17E6TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING * 617 Top View PROVISIONAL ISSUE B - MARCH 2005 1 ZXMP6A17E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) SYMBOL V DSS V GS ID ADVANCE INFORMATION LIMIT -60 20 -3.0 -2.4 -2.3 -13.6 -2.5 -13.6 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C Linear Derating Factor (a) (c) (b) I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE B - MARCH 2005 2 ADVANCE INFORMATION CHARACTERISTICS ZXMP6A17E6 1.2 -ID Drain Current (A) Limited Max Power Dissipation (W) 10 RDS(ON) 1 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 DC 1s 100ms 10ms 1ms 100us Single Pulse, Tamb=25C 100m 10m 1 10 100 P-channel Safe Operating Area -VDS Drain-Source Voltage (V) Temperature (C) Derating Curve 100 Single Pulse Tamb=25C Thermal Resistance (C/W) 100 80 D=0.5 60 40 20 0 100 1m 10m 100m Single Pulse D=0.2 D=0.05 D=0.1 MaximumPower (W) 1k 10 1 100 1m 10m 100m 1 10 100 1k 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE B - MARCH 2005 3 ZXMP6A17E6 PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) (1) ADVANCE INFORMATION ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) SYMBOL MIN. TYP. MAX. UNI T CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -60 -1.0 100 -1.0 0.125 0.190 4.9 V A nA V I D =-250 A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-2.3A V GS =-4.5V, I D =-1.9A S V DS =-15V,I D =-2.3A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) C iss C oss C rss 670 46.7 28 pF pF pF V DS =-30V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) t d(on) tr t d(off) tf Qg Qg Q gs Q gd 2.4 3.5 30.0 7.4 7.3 15.1 1.8 1.9 ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-2.3A V DS =-30V,V GS =-5V, I D =-2.3A V DD =-30V, I D =-1A R G 6.0 , V GS =-10V V SD t rr Q rr -0.85 26.4 32.7 -0.95 V ns nC T J =25C, I S =-2A, V GS =0V T J =25C, I F =-1.7A, di/dt= 100A/s NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE B - MARCH 2005 4 ADVANCE INFORMATION TYPICAL CHARACTERISTICS ZXMP6A17E6 T = 25C 10V -ID Drain Current (A) 1 2.5V -VGS 2V -ID Drain Current (A) 10 4.5V 3.5V 3V T = 150C 10V 10 4.5V 3.5V 3V 2.5V 2V 1 -VGS 1.5V 0.1 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 2.0 10 Output Characteristics VGS = -10V ID = - 0.9A RDS(on) Normalised RDS(on) and VGS(th) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 50 -ID Drain Current (A) T = 150C 1 T = 25C VGS(th) VGS = VDS ID = -250uA 0.1 1 2 3 -VDS = 10V 4 5 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 2V -VGS 2.5V 3V 3.5V T = 25C Normalised Curves v Temperature -ISD Reverse Drain Current (A) 10 T = 150C 10 1 1 4.5V 10V 0.1 T = 25C 0.1 0.1 1 10 0.01 0.0 -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE B - MARCH 2005 5 ZXMP6A17E6 ADVANCE INFORMATION TYPICAL CHARACTERISTICS -VGS Gate-Source Voltage (V) 1000 900 800 700 600 500 400 300 200 100 0 0.1 10 VGS = 0V f = 1MHz ID = -2.2A C Capacitance (pF) 8 6 4 2 VDS = -30V CISS COSS CRSS 1 10 0 0 2 4 6 8 10 12 14 16 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE B - MARCH 2005 6 ADVANCE INFORMATION PACKAGE OUTLINE ZXMP6A17E6 PAD LAYOUT DETAILS CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimeters DIM Min A A1 A2 b C D 0.90 0.00 0.90 0.35 0.09 2.80 Max 1.45 0.15 1.30 0.50 0.20 3.00 Min 0.35 0 0.035 0.014 0.0035 0.110 Max 0.057 0.006 0.051 0.019 0.008 0.118 E E1 L e e1 L Inches DIM Min 2.60 1.50 0.10 Max 3.00 1.75 0.60 Min 0.102 0.059 0.004 Max 0.118 0.069 0.002 Millimeters Inches 0.95 REF 1.90 REF 0 10 0.037 REF 0.074 REF 0 10 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE B - MARCH 2005 7 |
Price & Availability of ZXMP6A17E6TC
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